Methods for titanium silicide formation using TiCl4 precursor and silicon-containing precursor
AssigneeApplied Materials, Inc.
InventorsHua Chung, Matthias Bauer, Schubert S. Chu, Satheesh Kuppurao
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Abstract
The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.
Claims20
A method of forming a titanium silicide layer, comprising:
- heating a substrate in a process chamber to a temperature within a range of 400 degrees Celsius to 500 degrees Celsius, the substrate comprising:
- one or more source/drain regions;
- one or more first n-type silicon layers disposed on the one or more source/drain regions;
- and
- one or more highly-doped n-type silicon layers disposed on the one or more first n-type silicon layers, each of the one or more highly-doped n-type silicon layers having an n-type dopant concentration within a range of 1×1018 atoms/cm3 to 4×1021 atoms/cm3;
- and
- exposing the substrate to a silicon precursor and titanium precursor concurrently while maintaining a pressure within the process chamber between 10 Torr and 100 Torr, the titanium precursor comprising TiCl4;
- and
- forming a titanium silicide layer on the one or more highly-doped n-type silicon layers.
A method of forming a titanium silicide layer, comprising:
- heating a substrate in a process chamber to a temperature within a range of 400 degrees Celsius to 500 degrees Celsius, the substrate comprising:
- one or more first n-type silicon layers;
- and
- one or more highly-doped n-type silicon layers disposed over the one or more first n-type silicon layers, the one or more highly-doped n-type silicon layers having an n-type dopant concentration within a range of 1×1018 atoms/cm3 to 4×1021 atoms/cm3;
- exposing the substrate to a silicon precursor and titanium precursor concurrently while maintaining a pressure within the process chamber between 80 Torr and 100 Torr, the titanium precursor comprising TiCl4;
- and
- forming a titanium silicide layer on the one or more highly-doped n-type silicon layers.
Dependencies are inferred from the claim text.