AlOx/InOx gate insulator for HEMT
AssigneeFujitsu Limited
InventorsShirou Ozaki, Kozo Makiyama, Naoya Okamoto
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Abstract
A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.
Claims9
A semiconductor device comprising:
- a first semiconductor layer formed, on a substrate, of a nitride semiconductor;
- a second semiconductor layer formed, on the first semiconductor layer, of a In0.18Al0.82N;
- a source electrode formed on the second semiconductor layer;
- a drain electrode formed on the second semiconductor layer;
- a metal oxide film formed in the second semiconductor layer;
- and
- a gate electrode formed on the metal oxide film,
- wherein the metal oxide film includes AlOx and InOx, and
- wherein AlOx/InOx in the metal oxide film is greater than or equal to 10.
Dependencies are inferred from the claim text.