Semiconductor device having a surface insulator layer and manufacturing method therefor

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor structure, wherein the semiconductor structure comprises:
• an active region and a gate structure located in the active region, the gate structure comprising a gate electrode, and the active region exposing an upper surface of the gate electrode;
• forming a surface insulator layer on the upper surface of the gate electrode;
• forming a patterned interlayer dielectric layer on the semiconductor structure, wherein the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region;
• and
• forming a conductive contact layer passing through the first through hole and contacting with the active region;
• wherein the step of forming a patterned interlayer dielectric layer on the semiconductor structure comprises:
• forming an interlayer dielectric layer covering the semiconductor structure;
• forming a patterned second mask layer on the interlayer dielectric layer, wherein the second mask layer has a second opening exposing a portion of the interlayer dielectric layer;
• performing reflow processing on the second mask layer, so as to reduce a side-wall inclination angle of the second opening;
• etching the interlayer dielectric layer using the second mask layer processed with the reflow processing as a mask, so as to form the first through hole;
• and
• removing the second mask layer.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor structure, wherein the semiconductor structure comprises:
• an active region and a gate structure located in the active region, the gate structure comprising a gate electrode, and the active region exposing an upper surface of the gate electrode;
• forming a surface insulator layer on the upper surface of the gate electrode;
• forming a patterned interlayer dielectric layer on the semiconductor structure, wherein the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region;
• and
• forming a conductive contact layer passing through the first through hole and contacting with the active region;
• wherein:
• in the step of providing a semiconductor structure, the gate structure further comprises a gate insulator layer separating the gate electrode from the active region;
• and
• in the step of forming the surface insulator layer, the surface insulator layer and the gate insulator layer enclose the gate electrode.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor structure, wherein the semiconductor structure comprises:
• an active region and a gate structure located in the active region, the gate structure comprising a gate electrode, and the active region exposing an upper surface of the gate electrode;
• forming a surface insulator layer on the upper surface of the gate electrode;
• forming a patterned interlayer dielectric layer on the semiconductor structure, wherein the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region;
• forming a conductive contact layer passing through the first through hole and contacting with the active region;
• forming a patterned passivation layer on the conductive contact layer, the passivation layer having a second through hole exposing a portion of the conductive contact layer;
• and
• forming a metal connector passing through the second through hole and contacting with the conductive contact layer.