Tone inversion integration for phase change memory
AssigneeInternational Business Machines Corporation
InventorsMatthew J. BrightSky, Robert L. Bruce, John M. Papalia, HsinYu Tsai
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Abstract
Embodiments of the invention are directed to methods and resulting structures for forming a storage element using phase change memory (PCM). In a non-limiting embodiment of the invention, a PCM layer is formed over a surface of a bottom electrode. A top electrode is formed over the PCM layer using a tone inversion process that includes a sacrificial layer. A PCM pillar is then formed by patterning the PCM layer to expose a surface of the bottom electrode. The tone inversion process enables a sub-50 nm PCM pillar diameter.
Claims3
A semiconductor device comprising:
- a bottom electrode
- a phase change memory (PCM) pillar formed over a surface of the bottom electrode;
- an etch stop layer formed over the PCM pillar;
- and
- a ring electrode formed over the etch stop layer, the ring electrode comprising three stacked electrode layers;
- wherein the PCM pillar comprises a diameter of about 10 nm to about 50 nm.
Dependencies are inferred from the claim text.