Metal based nanowire tunnel junctions

A semiconductor device comprising a tunnel junction comprising a first semiconductor alloy of a first composition, and a layer of a metal of a second composition, wherein the semiconductor device is a nanowire.

A semiconductor device comprising:

• a plurality of semiconductor layers, each semiconductor layer of the plurality of semiconductor layers having a composition;
• and
• a plurality of metallic layers, each metallic layer of the plurality of metallic layers comprising a metal and disposed between a pair of semiconductor layers of the plurality of semiconductor layers, wherein a metallic layer of the plurality of metallic layers in combination with its associated pair of semiconductor layers of the plurality of semiconductor layers comprises a tunnel junction, and wherein the semiconductor device comprises a plurality of nanowires.