Method for forming amorphous silicon multuple layer structure

A method for forming an amorphous silicon multiple layer structure, comprising:

• providing a nitrogen-containing material layer;
• forming a first amorphous silicon layer on the nitrogen-containing material layer, wherein the first amorphous silicon layer comprises a plurality of hydrogen atoms disposed therein, and wherein the hydrogen atoms gas enters into the nitrogen-containing material layer gradually after the first amorphous silicon layer is formed;
• performing an ultraviolet (UV) curing step to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer and the nitrogen-containing material layer;
• and
• forming a second amorphous silicon layer on the first amorphous silicon layer.