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US 10,312,079 B2Granted
Etching method
AssigneeTokyo Electron Limited
InventorsKoji Takeya, Kazuaki Nishimura, Nobuhiro Takahashi, Junichiro Matsunaga
Life of this patent
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Abstract
An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.
Claims6
An etching method comprising:
- providing a target substrate having silicon and silicon-germanium in a chamber;
- supplying a processing gas containing H2 gas and Ar gas into the chamber in an excited state, the processing gas being devoid of species comprising halogen;
- and selectively etching the silicon with respect to the silicon-germanium by the processing gas in the excited state.
Dependencies are inferred from the claim text.