Method for forming aluminum-containing dielectric layer

A method comprising:

• providing a substrate in an atomic layer deposition (ALD) process chamber;
• applying an oxygen-based precursor to the substrate to form an oxygen treated surface on the substrate;
• after applying the oxygen based precursor, injecting a first precursor that includes a first molecule with a first molecular weight into the ALD chamber for a first interval such that the first molecule bonds directly to the oxygen treated surface of the substrate;
• and
• after applying the oxygen based precursor, injecting a second precursor that includes a second molecule containing aluminum and having a second molecular weight into the ALD chamber for a second interval thereby forming a first aluminum layer on the substrate, wherein the second molecular weight is less than the first molecular weight and the second molecule bonds directly to the oxygen treated surface of the substrate after the injecting of the second precursor.

A method comprising:

• providing a substrate in an atomic layer deposition (ALD) process chamber;
• applying an oxygen-based precursor to the substrate to form an oxygen treated surface on the substrate;
• after applying the oxygen based precursor, injecting a first precursor that includes a first molecule with a first molecular weight into the ALD process chamber such that the first molecule bonds directly to the oxygen treated surface of the substrate;
• after applying the oxygen based precursor, injecting a second precursor that includes a second molecule containing aluminum and having a second molecular weight into the ALD process chamber thereby forming a first aluminum-containing layer on the substrate, wherein the second molecular weight is less than the first molecular weight by about 80% and the second molecule bonds directly to the oxygen treated surface of the substrate after the injecting of the second precursor;
• and
• injecting the first precursor into the ALD process chamber thereby forming a second non-aluminum-containing layer over the first aluminum-containing layer.