Selective removal of carbon-containing and nitrogen-containing silicon residues

A method for use in semiconductor device manufacture, the method comprising:

• etching a semiconductor device layer, wherein the etching produces at least one of a carbon-containing silicon residue or a nitrogen-containing silicon residue;
• and
• after etching the semiconductor device layer, cleaning the semiconductor device layer to at least partially remove at least one of the carbon-containing silicon residue or the nitrogen-containing silicon residue with a cleaning system comprising:
• water in a range of about 54.5% (wt/wt) to about 92.8% (wt/wt);
• a hydroxyl-terminated organic material comprising 1-(2-hydroxyethyl)-2-pyrrolidone in a range of about 5% (wt/wt) to about 30% (wt/wt);
• a diol comprising diethylene glycol in a range of about 2% (wt/wt) to about 15% (wt/wt);
• and
• a fluoride ion donor material comprising a combination of ammonium fluoride and ammonium bifluoride in a range of about 0.2% (Wt/Wt) to about 92.8% (wt/wt).

A method for use in semiconductor device manufacture, the method comprising:

• dry etching a semiconductor structure with a plasma, the semiconductor structure comprising at least one of amorphous silicon or silicon oxide;
• the plasma comprising at least one of CO2, CxHyFz, or N2, wherein the dry etching produces at least one of a carbon-containing silicon material or a nitrogen-containing silicon material;
• and
• after dry etching the semiconductor structure, reducing a concentration of at least one of the carbon-containing silicon material or the nitrogen-containing silicon material with an at least partially aqueous system consisting of:
• about 5% (wt/wt) to about 30% (wt/wt) 1-(2-hydroxyethyl)-2-pyrrolidone;
• about 2% (wt/wt) to about 15% (wt/wt) diethylene glycol;
• about 0.2% (wt/wt) to about 92.8% (wt/wt) a combination of ammonium fluoride and ammonium bifluoride;
• and
• about 54.5% (wt/wt) to about 92.8% (wt/wt) water.