Memory systems and memory programming methods

A memory system comprising:

• a memory element configured to be programmed to a plurality of different memory states at a plurality of different moments in time;
• and
• circuitry configured to implement a programming operation to change the programming of the memory element from a first of the memory states to a second of the memory states, and wherein the circuitry is configured to implement the programming operation by applying a first programming signal to the memory element to change the memory element from the first memory state to the second memory state and applying a second programming signal to the memory element after the change of the memory element from the first memory state to the second memory state, wherein the first and second programming signals are controlled to have different electrical characteristics.