Memory and electronic devices with reduced operational energy in chalcogenide material

A memory device, comprising:

• a memory cell comprising:
• a first electrode;
• a second electrode;
• and
• a chalcogenide material disposed between the first electrode and the second electrode, the chalcogenide material having a first coefficient of thermal expansion;
• and
• a thermal expansion material at least partially surrounding the chalcogenide material of the memory cell, the thermal expansion material having a second coefficient of thermal expansion differing from the first coefficient of thermal expansion of the chalcogenide material, the thermal expansion material selected to stress the chalcogenide material upon heating or cooling of the thermal expansion material during operation of the memory device.

An electronic device, comprising:

• an array of memory devices, at least one memory device of the array comprising:
• an upper electrode;
• a lower electrode;
• a chalcogenide material between the upper electrode and the lower electrode, the chalcogenide material extending laterally beyond a sidewall of the lower electrode;
• and
• a stress material laterally adjacent the chalcogenide material and configured to apply a lateral stress upon the chalcogenide material in response to a temperature change or an electrical field.