Phase changeable memory device having a cross point array structure
AssigneeSK hynix Inc.
InventorIn Soo Lee
Life of this patent
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Abstract
A phase changeable memory device may include a plurality of word lines, a plurality of bit lines, a memory cell, at least one source line, and a discharge unit. The bit lines may cross the word lines. The memory cell may include access elements connected with the at least one source line. The source line may be connected with the access elements. The discharge unit may be connected with a bit line. The discharge unit may be configured to discharge a voltage of the bit line to a ground terminal in response to a signal of the source line. The discharge unit may include a phase changeable material.
Claims10
A phase changeable memory device comprising:
- a plurality of word lines;
- a plurality of bit lines arranged to cross the word lines;
- a plurality of memory cells electrically coupled between the word lines and the bit lines, respectively, each of the memory cells including an access element and a storage unit;
- a plurality of source lines electrically connected with the memory cells, respectively;
- and
- a plurality of discharge units electrically coupled to the bit lines to discharge a voltage of the bit lines to a ground terminal, each of the discharge units configured to be enabled in response to a current of a corresponding source line, which is provided from a corresponding bit line through a corresponding memory cell, and each of the discharge units including a phase changeable material.
A phase changeable memory device comprising:
- a plurality of word lines;
- a plurality of bit lines arranged to cross the word lines;
- a plurality of memory cells positioned between the word lines and the bit lines, respectively;
- a common source line electrically coupled the plurality of the memory cells in common;
- and
- a plurality of discharge units electrically coupled to the bit lines to discharge a voltage of the bit lines to a ground terminal in response to a current or a voltage of the common source line,
- wherein each of the discharge units is configured to be driven when the current or the voltage of the source line, which is transmit from the bit line through a selected memory cell, is higher than a threshold current or a threshold voltage of the discharge unit.
Dependencies are inferred from the claim text.