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US 10,311,947 B2Granted
Via formation for cross-point memory
AssigneeMicron Technology, Inc.
InventorStephen Tang
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.
Claims19
A memory device, comprising:
- a first plurality of electrically conductive lines oriented in a first direction on a first level;
- a second plurality of electrically conductive lines oriented in a second direction on a second level;
- a first memory material configurable to store information and positioned between the first plurality of electrically conductive lines and the second plurality of electrically conductive lines;
- and
- a plurality of electrically conductive vias in contact with the first memory material and with the second plurality of electrically conductive lines, wherein each electrically conductive via is configured to carry signals between the second plurality of electrically conductive lines and circuitry below the first level.
2 more elements
A memory device, comprising:
- a first plurality of electrically conductive lines oriented in a first direction on a first level;
- a second plurality of electrically conductive lines oriented in a second direction on a second level;
- and
- a first memory material configurable to store information positioned between the first plurality of electrically conductive lines and the second plurality of electrically conductive lines;
- and
- a plurality of electrically conductive vias in contact with the first memory material and with the second plurality of electrically conductive lines, wherein each electrically conductive via is configured to carry signals between the second plurality of electrically conductive lines and circuitry below the first level, and wherein at least one via of the plurality of electrically conductive vias is located within a trench of one etched area of a plurality of etched areas filled with an electrically conductive material.
3 more elements
A system, comprising:
- a non-volatile memory device, comprising:
- a first plurality of electrically conductive lines oriented in a first direction on a first level;
- a second plurality of electrically conductive lines oriented in a second direction on a second level;
- a first memory material configurable to store information and positioned between the first plurality of electrically conductive lines and the second plurality of electrically conductive lines;
- a plurality of electrically conductive vias in contact with the first memory material and with the second plurality of electrically conductive lines, wherein each electrically conductive via is configured to carry signals between the second plurality of electrically conductive lines and circuitry below the first level;
- and
- a control unit to access an array of memory cells in response to receiving a memory access command;
- and
- a processor to transmit the memory access command to the non-volatile memory device, the processor further to execute one or more applications stored in the array of memory cells.
6 more elements
A memory device, comprising:
- a first plurality of electrically conductive electrode lines oriented in a first direction on a first level;
- and
- a first memory material configurable to store information and positioned over the first plurality of electrically conductive electrode lines, the first memory material configurable to store information and including a plurality of electrically conductive vias in contact with the first memory material and with a second plurality of electrically conductive lines oriented in a second direction on a second level, wherein each electrically conductive via of the plurality of electrically conductive vias is configured to carry signals between the second plurality of electrically conductive lines and circuitry below the first level.
Dependencies are inferred from the claim text.