Circuit design method and simulation method based on random telegraph signal noise
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Wook Jeon, Hyo-Eun Park, Keun-Ho Lee, Ui-Hui Kwon, Jong-Chol Kim
Life of this patent
Estimating the term…
Abstract
A simulation method includes receiving a netlist describing a plurality of devices, performing an arithmetic operation by using values of random telegraph signal (RTS) noise factors respectively corresponding to the plurality of devices, generating an RTS model corresponding to each of the devices, based on a result of the arithmetic operation, and generating a netlist in which the RTS model is reflected.
Claims20
A simulation method, executed by a computer, comprising:
- receiving, from a memory device, a first netlist describing a plurality of transistors and values of random telegraph signal (RTS) noise factors respectively corresponding to the transistors;
- performing an arithmetic operation by using the values of the RTS noise factors;
- generating an RTS model corresponding to each of the transistors, based on a result of the arithmetic operation, wherein the RTS model comprises a current source connected electrically in series between a source and a drain of each of the transistors;
- generating a second netlist describing the transistors in which the RTS model is reflected;
- and
- simulating an operation of the transistors using the second netlist to determine whether the simulated operation of the transistors comports with predetermined operational characteristics.
A circuit design method, executed by a computer, comprising:
- receiving, from a memory device, a first netlist and a first device model library in which random telegraph signal (RTS) noise is not reflected;
- determining RTS noise information corresponding to each of a plurality of transistors included in the first netlist;
- generating an RTS model corresponding to each of the transistors, based on a result of the determination of the RTS noise information, wherein the RTS model comprises a current source connected electrically in series between a source and a drain of each of the transistors;
- outputting a second netlist and a second device model library in which the RTS noise is reflected, based on the RTS model;
- and
- simulating an operation of the transistors using the second netlist to determine whether the simulated operation of the transistors comports with predetermined operational characteristics.
A simulation method, executed by a computer, comprising:
- receiving a first netlist describing a plurality of transistors;
- performing, by using the first netlist, a first simulation in which random telegraph signal (RTS) noise is not reflected;
- generating RTS noise information corresponding to each of the transistors, based on a result of the first simulation;
- generating an RTS model corresponding to each of the transistors, based on the RTS noise information, wherein the RTS model comprises a current source connected electrically in series between a source and a drain of each of the transistors;
- and
- performing, by using a second netlist describing the transistors, a second simulation in which RTS noise is reflected to determine whether a simulated operation of the transistors comports with predetermined operational characteristics, based on a result of the generation of the RTS model.
Dependencies are inferred from the claim text.