Multiple patterning approach using ion implantation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsTristan Y. Ma, Maureen K. Petterson, John Hautala, Steven R. Sherman
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Abstract
A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C. The method may include directing a first ion species into the photoresist patterning feature during a first exposure; and depositing a sidewall layer on the patterning feature after the directing at a deposition temperature, the deposition temperature being 200° C. or greater.
Claims18
A method for patterning a substrate, comprising:
- providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C.;
- directing ions into the photoresist patterning feature during a first exposure;
- and
- after the directing the ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater, wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer.
A method for patterning a substrate, comprising:
- providing a photoresist patterning feature on the substrate, the photoresist patterning feature having a first critical dimension (CD) and having a first carbon concentration;
- directing first ions to the photoresist patterning feature, wherein after the directing the first ions the photoresist patterning feature attains a second CD, less than the first CD;
- directing second ions to the photoresist patterning feature, wherein after the directing the second ions the photoresist patterning feature has a second carbon concentration, wherein the second carbon concentration is greater than the first carbon concentration;
- and
- after the directing the first ions and the second ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater, wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer.
A method for patterning a substrate, comprising:
- providing a photoresist patterning feature on the substrate, the photoresist patterning feature having a first critical dimension (CD) and comprising an oxygen-containing polymer having a first oxygen concentration;
- directing first ions to the photoresist patterning feature, wherein after the directing the first ions the photoresist patterning feature attains a second CD, less than the first CD;
- directing second ions to the photoresist patterning feature, wherein after the directing the second ions the photoresist patterning feature has a second oxygen concentration, wherein the second oxygen concentration is less than the first oxygen concentration;
- and
- after the directing the first ions and the second ions, depositing a sidewall layer on the photoresist patterning feature at a deposition temperature, the deposition temperature being 200° C. or greater wherein the photoresist patterning feature is thermally stable during the depositing the sidewall layer.
Dependencies are inferred from the claim text.