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US 10,310,377 B2Granted
Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsTakashi Makinoshima, Masatoshi Echigo
Life of this patent
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Abstract
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
Claims17
A composition for forming a film for lithography comprising:
- a material for forming the film for lithography comprising a resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4;
- and
- an acid generating agent.
1 more element
A composition for forming a film for lithography comprising:
- a material for forming a film for lithography comprising a compound represented by formula (1),
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4;
- an organic solvent;
- and
- an acid generating agent.
2 more elements
A film for lithography, formed using a composition comprising:
- a material for forming the film for lithography comprising a compound represented by formula (1),
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4;
- an acid generating agent;
- and
- an organic solvent.
2 more elements
A resist pattern forming method, comprising
- step (A-1) of forming a film on a substrate by using a composition for forming the film comprising a material for forming the film for lithography comprising a compound represented by formula (1),
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4, and an organic solvent,
- step (A-2) of forming at least one photoresist layer on the film, and
- step (A-3) of, after step (A-2), irradiating a predetermined region of the photoresist layer with radiation, followed by developing.
1 more element
A circuit pattern forming method comprising
- step (B-1) of forming a film on a substrate by using a composition for forming a film for lithography, comprising an organic solvent and a compound represented by formula (1),
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4;
- step (B-2) of forming an intermediate layer film on the film by using a silicon atom-containing resist intermediate layer film material,
- step (B-3) of forming at least one photoresist layer on the intermediate layer film,
- step (B-4) of, after step (B-3), irradiating a predetermined region of the photoresist layer with radiation, followed by developing to form a resist pattern, and
- step (B-5) of, after step (B-4), etching the intermediate layer film with the resist pattern as a mask, etching the film with the obtained intermediate layer film pattern as an etching mask and etching the substrate with the obtained film pattern as an etching mask, to form a pattern on the substrate.
3 more elements
A method for purifying a composition for forming a film for lithography, the method comprising:
- providing a material for forming the film for lithography comprising a resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4;
- bringing a solution (A) comprising an organic solvent optionally immiscible with water, and the material for forming a film for lithography into contact with an acidic aqueous solution for extraction to form a purified material;
- and
- combining at least one of an acid generating agent and an acid crosslinking agent with at least one of the purified material and the material for forming the film for lithography.
2 more elements
A method for forming a film for lithography comprising the steps of:
- obtaining a composition for forming a film for lithography, the composition comprising a compound represented by the following formula (1):
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4;
- and
- forming a film for lithography from the composition and an acid generating agent.
1 more element
Dependencies are inferred from the claim text.