TE polarizer based on SOI platform
AssigneeInphi Corporation
InventorsJie Lin, Masaki Kato
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Abstract
The present application discloses a Transverse Electric (TE) polarizer. The TE polarizer includes a silicon-on-insulator substrate having a silicon dioxide layer. The TE polarizer further includes a waveguide embedded in the silicon dioxide layer. Additionally, the TE polarizer includes a plate structure embedded in the silicon dioxide layer substantially in parallel to the waveguide with a gap distance. In an embodiment, the plate structure induces an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide.
Claims20
A Transverse Electric (TE) polarizer comprising:
- a silicon-on-insulator substrate having a silicon dioxide layer;
- a waveguide embedded in the silicon dioxide layer;
- a plate structure embedded in the silicon dioxide layer substantially in parallel to the waveguide with a gap distance;
- wherein the plate structure induces an extra transmission loss greater than 6 dB to a Transverse Magnetic (TM) mode while keeps a low transmission loss smaller than 2 dB to a Transverse Electric (TE) mode in a light wave of a bandwidth over 30 nm traveling through the waveguide.
A method for forming a Transverse Electric (TE) polarizer comprising:
- providing a silicon-on-insulator substrate having a silicon dioxide layer;
- forming a waveguide embedded in the silicon dioxide layer;
- forming a plate structure embedded in the silicon dioxide layer substantially in parallel to the waveguide with a gap distance;
- wherein dimensions of the waveguide and the plate structure and the gap distance between them are tuned to induce an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide greater than a first target loss of 6 dB for all wavelengths in a band over 30 nm and a transmission loss of Transverse Electric (TE) mode in the light wave is smaller than a second target loss of 2 dB for all wavelengths in the band over 30 nm.
Dependencies are inferred from the claim text.