Near-infrared cut filter and solid-state imaging device

A near-infrared cut filter comprising:

• a stack comprising:
• a near-infrared absorbing glass substrate;
• a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye and a transparent resin;
• and
• a dielectric layer with a thickness of 5 nm or more provided between the near-infrared absorbing glass substrate and the near-infrared absorbing layer;
• and
• a dielectric multilayer film provided on at least one main surface of the stack, wherein
• the dielectric layer comprises an alkali barrier film comprising at least one material selected from SiO2, SiOx (where 0.8≤x<2) and Al2O3 and
• maximum transmittance of the near-infrared cut filter at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

A near-infrared cut filter comprising:

• a stack comprising:
• a near-infrared absorbing glass substrate;
• a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye and a transparent resin;
• and
• a dielectric layer with a thickness of 5 nm or more provided between the near-infrared absorbing glass substrate and the near-infrared absorbing layer;
• and
• a dielectric multilayer film provided on at least one main surface of the stack, wherein
• the dielectric layer has an adhesive film provided on the near-infrared absorbing glass substrate side and an alkali barrier film provided on the near-infrared absorbing layer side,
• the adhesive film comprises Al2O3, and the alkali barrier film comprises SiO2 or SiOx (where 0.8≤x<2), and
• maximum transmittance of the near-infrared cut filter at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

A near-infrared cut filter comprising:

• a stack comprising:
• a near-infrared absorbing glass substrate;
• and
• a near-infrared absorbing layer provided on at least one main surface of the near-infrared absorbing glass substrate and comprising a near-infrared absorbing dye, an ultraviolet absorber, and a transparent resin;
• and
• a dielectric multilayer film provided on at least one main surface of the stack, wherein
• an average value of transmittance of the near-infrared cut filter at an incident angle at 0 degree is 70% or more in a wavelength of from 430 to 450 nm,
• an average value of transmittance of the near-infrared cut filter at an incident angle at 0 degree is 5% or less in a wavelength of from 350 to 390 nm, and
• the ultraviolet absorber satisfies requirements (iv-1) and (iv-2):
• (iv-1) the ultraviolet absorber has at least one maximum absorption wavelength in a region of a wavelength of 415 nm or less in a light absorption spectrum of a wavelength of from 350 to 800 nm measured after dissolved in dichloromethane, and a longest maximum absorption wavelength λmax(UV) having a longest wavelength among the at least one maximum absorption wavelength is in a wavelength of from 360 to 415 nm;
• and
• (iv-2) when transmittance in the longest maximum absorption wavelength λmax(UV) is 10% in a spectral transmittance curve measured after dissolved in dichloromethane, a difference λL90−λL50 between a wavelength λL90 and a wavelength λL50 is 13 nm or less, provided that λL90 is a wavelength with which transmittance becomes 90% in a region of a wavelength longer than the longest maximum absorption wavelength λmax(UV) and λL50 is a wavelength with which transmittance becomes 50% in a region of a wavelength longer than the longest maximum absorption wavelength λmax(UV).