FET biosensor
AssigneeImec Vzw
InventorsNadine Collaert, Voon Yew Thean
Life of this patent
Estimating the term…
Abstract
The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices such as field-effect transistor devices configured for biomolecule sensing. In one aspect, a semiconductor chip comprises at least one field-effect transistor device which comprises a source, a drain, a gate stack and a channel region formed between the source and the drain. The gate stack only partially overlaps the channel region at the source side and/or at the drain side, such that a non-overlapped channel region at the source side and/or at the drain side is formed, where the non-overlapped channel region is configured for sensing biomolecules.
Claims18
A method of fabricating a semiconductor chip configured for bio-sensing, the method comprising:
- obtaining a substrate comprising at least one semiconductor layer;
- providing a gate stack on the substrate;
- providing a doped drain region in and/or on the substrate;
- and
- providing a doped source region in and/or on the substrate,
- wherein the doped drain region and/or the doped source region have an underlap region laterally between the gate stack and the source region and/or between the gate stack and the drain region, such that the underlap region is configured for sensing biomolecules attached thereto.
A semiconductor chip configured for bio-sensing, the semiconductor chip comprising:
- at least one field-effect transistor (FET) device comprising a source, a drain, a gate stack and a channel region formed between the source and the drain,
- wherein the gate stack partially overlaps the channel region at a source side and/or at a drain side, such that a non-overlapped channel region is formed at the source side and/or at the drain side that is configured for sensing biomolecules.
Dependencies are inferred from the claim text.