Method of partially infiltrating an at least partially leached polycrystalline diamond table and resultant polycrystalline diamond compacts

A method of fabricating a rotary drill bit, comprising:

• attaching at least one polycrystalline diamond compact to a bit body of the rotary drill bit by a method including:
• forming a polycrystalline diamond table in the presence of a metal-solvent catalyst including one of cobalt, iron, nickel, or alloys thereof in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein, the plurality of bonded diamond grains exhibiting an average grain size of about 40 μm or less;
• at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom;
• subjecting the at least partially leached polycrystalline diamond table and a substrate to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions to partially infiltrate the at least partially leached polycrystalline table with an infiltrant including at least one additional metal-solvent catalyst including one of cobalt, iron, nickel, or alloys thereof and attach the partially infiltrated polycrystalline diamond table to the substrate;
• wherein a maximum temperature (T), a total process time (t), and a maximum internal cell pressure (P) of the second high-pressure/high-temperature process are chosen so that β is greater than 75° Celsius·hours/gigapascals (“° C.·h/GPa”) to about 325° C.·h/GPa, with β represented as β=T·t/P;
• wherein P in the second high-pressure/high-temperature process is greater than a maximum internal cell pressure of the first high-pressure/high-temperature process;
• and
• wherein the infiltrated polycrystalline diamond table includes a first region adjacent to the substrate including the infiltrant disposed in at least a portion of the interstitial regions thereof and a second region extending inwardly from an exterior working surface to a selected depth of at least about 700 μm, the second region being substantially free of the infiltrant without having been leached of the infiltrant.