Method for manufacturing two-dimensional transition metal dichalcogemide thin film

A method for preparing a two-dimensional transition metal dichalcogenide thin film, comprising:

• performing a surface treatment on a substrate in a deposition chamber to reduce the surface energy of the substrate;
• and
• introducing a chalcogen-containing precursor, a transition-metal-containing precursor, and a precursor-decomposition-accelerating catalyst into the deposition chamber to deposit a two-dimensional transition metal dichalcogenide monolayer on the substrate,
• wherein the deposition step includes further adding an inhibitor for preventing the creation of a two-dimensional transition metal dichalcogenide bilayer.

A method for preparing a two-dimensional transition metal dichalcogenide thin film, comprising:

• (1) performing a surface treatment on a substrate in a deposition chamber to reduce the surface energy of the substrate;
• (2) introducing a chalcogen-containing precursor and a transition-metal-containing precursor into the deposition chamber at a temperature of 500° C. or below and a first pressure of 0.001 to 760 Torr to create crystals of the two-dimensional transition metal dichalcogenide on the substrate;
• (3) introducing the chalcogen-containing precursor and the transition-metal-containing precursor into the deposition chamber at a second pressure higher than the first pressure of the step (2) to increase the crystal size of the two-dimensional transition metal dichalcogenide on the substrate;
• and
• (4) introducing the chalcogen-containing precursor and the transition-metal-containing precursor into the deposition chamber at a third pressure higher than the second pressure of the step (3) to form a two-dimensional transition metal dichalcogenide monolayer on the substrate,
• wherein an inhibitor for preventing the creation of a two-dimensional transition metal dichalcogenide bilayer is further added into the deposition chamber in the steps (2), (3) and (4).