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US 10,309,007 B2Granted
Apparatus for sputtering and operation method thereof
AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorYujie Yang
Life of this patent
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Abstract
Some embodiments of the present disclosure provide a sputtering apparatus including a magnetron structure configured to erode a target according to a predetermined erosion rate profile symmetric to a central axis of the magnetron structure. The predetermined erosion rate profile includes a first peak rate in proximity to the central axis; and a second peak rate located at about from 0.7 to 0.75 of a radius of the target from the central axis.
Claims21
A sputtering apparatus, comprising:
- a magnetron structure including an outer pole and an inner pole, configured to erode a target according to a predetermined erosion rate profile symmetric to a central axis of the magnetron structure, wherein:
- the outer pole and the inner pole of the magnetron structure are arranged in accordance with a predetermined normalized loop length profile,
- the predetermined normalized loop length profile includes a portion of a normalized loop length being substantially constant for about 0.4 of a radius of the target from the central axis, and
- the predetermined erosion rate profile includes:
- a first peak rate in proximity to the central axis;
- and
- a second peak rate located at about from 0.7 to 0.75 of the radius of the target from the central axis, the first peak rate being substantially equal to the second peak rate.
4 more elements
A sputtering apparatus, comprising:
- a magnetron structure, comprising:
- a first portion outside a boundary;
- a second portion inside the boundary;
- and
- an outer pole and an inner pole,
- wherein:
- an amount of the first portion being tangential to a circle centering at a central axis is substantially greater than an amount of the second portion being tangential to the circle,
- the inner and outer poles are arranged in accordance with a predetermined normalized loop length profile that has a portion of a normalized loop length being substantially constant for about 0.4 of a radius of a target from the central axis, and
- the magnetron structure is configured to erode the target according to a predetermined profile of erosion rate that includes:
- a first peak rate near the central axis of the magnetron structure;
- and
- a second peak rate at about from 0.7 to 0.75 of the radius of the target from the central axis.
9 more elements
A method of sputtering, comprising:
- positioning a wafer at a predetermined distance from a target;
- rotating a magnetron structure with respect to a central axis, wherein:
- the magnetron structure includes an outer pole and an inner pole that are arranged in accordance with a predetermined normalized loop length profile, and
- the predetermined normalized loop length profile includes a portion of a normalized loop length being substantially constant for about 0.4 of a radius of the target from the central axis;
- and
- eroding the target according to a predetermined erosion rate profile, the target on the central axis being eroded at a first rate, the target near from 0.5 to 0.55 of the radius thereof being eroded at about 0.5 of the first rate;
- and the target near from 0.7 to 0.75 of the radius thereof being eroded at about 1.1 of the first rate.
4 more elements
Dependencies are inferred from the claim text.