MEMS gap control structures

A method comprising:

• forming a cavity in a first side of a first silicon wafer;
• forming an oxide layer on the first side and in the cavity;
• bonding the first side of the first silicon wafer to a first side of a second silicon wafer;
• forming a gap control structure from a second side of the second silicon wafer, wherein the gap control structure and the second silicon wafer are a single continuous component;
• forming a MEMS (micro-electro-mechanical systems) structure in the second silicon wafer;
• and
• eutecticly bonding a standoff formed from the second side of the second silicon wafer to the third silicon wafer, wherein
• the gap control structure is distinct from the standoff eutecticly bonding the second silicon wafer to the third silicon wafer,
• the eutectic bonding includes pressing the second silicon wafer to a structure formed on a third silicon wafer, and
• the gap control structure remains in contact with the structure on the third silicon wafer after the eutectic bonding.