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US 10,295,910 B2Granted
Photoresists and methods of use thereof
AssigneeRohm and Haas Electronic Materials LLC
InventorGerhard Pohlers
Life of this patent
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Abstract
New photoresist are provided that comprises a low-Tg component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Claims9
A method for providing an ion-implanted semiconductor substrate comprising:
- providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
- wherein the photoresist comprises 1) a resin, 2) a photoactive component and 3) a resin having a Tg of at least about 5° C. less than the resin 1), and
- wherein the resin 3) comprises polymerized units of diethylene glycol methacrylate and/or diethylene glycol acrylate;
- and
- applying ions to the substrate.
2 more elements
Dependencies are inferred from the claim text.