Apparatus for measuring semiconductor device

An apparatus for measuring a semiconductor device, the apparatus comprising:

• a beam irradiating unit;
• and
• a measuring unit configured to measure a structure of a semiconductor pattern placed on a stage using first and second beams irradiated from the beam irradiating unit,
• wherein the measuring unit rotates the stage toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the stage, by a first angle to the horizontal plane, obtains a first measured value of the semiconductor pattern by irradiating the first beam to the semiconductor pattern, rotates the stage toward the central axis by a second angle different from the first angle to the horizontal plane, and obtains a second measured value of the semiconductor pattern by irradiating the second beam to the semiconductor pattern, wherein the stage is configured to rotate on the same plane with the stage rotated by the first angle to the horizontal plane and is rotated on the same plane with the stage rotated by the second angle to the horizontal plane, and
• the measuring unit comprising an arithmetic operation unit configured to obtain a plurality of first calculated values using the first angle and a plurality of first measured values obtained by rotating the stage on the same plane with the stage at the first angle, to obtain a first mean value using the first calculated values, to obtain a plurality of second calculated values using the second angle and a plurality of second measured values obtained by rotating the stage on the same plane with the stage at the second angle, to obtain a second mean value using the second calculated values, and to calculate an actual value using the first mean value and the second mean value.

An apparatus for measuring a semiconductor device, the apparatus comprising:

• a beam irradiating unit configured to irradiate a beam to a semiconductor substrate that is reflected as a reflected beam from the semiconductor substrate;
• a stage configured to receive the semiconductor substrate thereon and configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate;
• a detector configured to detect the reflected beam from the semiconductor substrate;
• and
• an arithmetic operation unit configured to control a rotation of the stage such that two or more reflected beams are detected by the detector at two or more respective different angles, wherein the arithmetic operation unit is configured to generate two or more calculated values corresponding to the two or more reflected beams using the two or more respective different angles, and to generate an actual value using a mean value of the two or more calculated values.