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US 10,263,107 B2Granted
Strain gated transistors and method
AssigneeThe Regents of the University of California
InventorsCengiz S Ozkan, Mihrimah Ozkan, Yu Chai
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Abstract
A strain gated transistor and associated methods are shown. In one example, a transistor channel region includes a metal dichalcogen layer that is stressed to improve electrical properties of the transistor.
Claims13
A semiconductor device, comprising:
- a transition metal dichalcogenide layer formed on a substrate, the transition metal dichalcogenide layer comprising a channel region, the channel region coupled between a first source/drain region and a second source/drain region;
- the first source/drain region and the second source/drain region penetrating within a thickness of the transition metal dichalcogenide layer;
- a top gate located adjacent to the channel region and separated therefrom by a conformal gate dielectric formed over the first source/drain region, the second source/drain region, the channel region, and a portion of the substrate that is not covered by the first source/drain region, the second source/drain region and the channel region;
- and
- a strain layer coupled adjacent to the channel region to provide a uniaxial tensile strain in the transition metal dichalcogenide channel region.
2 more elements
A method of forming a semiconductor device, comprising:
- forming a transition metal dichalcogenide layer on a substrate;
- removing a portion of the transition metal dichalcogenide layer to form a channel region;
- forming a first source/drain region and a second source/drain region penetrating within a thickness of the transition metal dichalcogenide layer;
- forming a conformal gate dielectric over the first source/drain region, the second source/drain region, the channel region, and a portion of the substrate that is not covered by the first source/drain region, the second source/drain region and the channel region;
- forming a top gate on the conformal gate dielectric;
- coupling a strain layer adjacent to the channel region to provide a uniaxial tensile strain in the channel region.
3 more elements
Dependencies are inferred from the claim text.