Efficient metal-insulator-metal capacitor fabrication
AssigneeInternational Business Machines Corporation
InventorsKisup Chung, Isabel C. Estrada-Raygoza, Hemanth Jagannathan, Chi-Chun Liu, Yann A. M. Mignot, Hao Tang
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Abstract
Methods of forming capacitors include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.
Claims12
A method for forming a capacitor, comprising:
- forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate that includes an embedded bottom contact;
- etching away the second block copolymer material;
- etching material from the substrate based on a pattern defined by the first block copolymer material to form a cavity in the substrate to a depth below a top surface of the embedded bottom contact;
- and
- conformally depositing a capacitor stack over the substrate, such that the capacitor stack is formed in contact with the embedded bottom contact and vertical surfaces of the cavity.
A method for forming a capacitor, comprising:
- forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate that includes an embedded bottom contact;
- etching away the second block copolymer material;
- forming a first mask over the substrate;
- etching material from the substrate in an area exposed by the first mask and the first block copolymer material to form cavities in the substrate to a depth below a top surface of the embedded bottom contact;
- conformally depositing a capacitor stack over the substrate, such that the capacitor stack is formed in contact with the bottom contact and vertical surfaces of the cavities;
- forming a second mask over the capacitor stack to define a capacitor area, wherein a same lithographic pattern and a developer of opposite polarity is used to form the second mask as is used to form the first mask;
- and
- etching away the capacitor stack from areas that are not covered by the second mask.
Dependencies are inferred from the claim text.