Device including resistor-capacitor (RC) structure and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Kuan Su, Yu-Hong Pan, Jen-Pan Wang, Tong-Min Weng, Tsung-Han Wu
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.
Claims14
A method for forming a semiconductor device, comprising:
- forming at least one capacitor in a first gate structure over a substrate, the at least one capacitor comprising
- a first gate electrode comprising a first conductive layer,
- a semiconductor layer comprising a semiconductor material and a dopant,
- a dielectric layer disposed between the first gate electrode and the semiconductor layer, and
- a second conductive layer contacting the semiconductor layer;
- and
- forming at least one resistor over the substrate, the at least one resistor comprising a third conductive layer and electrically connected to the at least one capacitor.
A method for forming a semiconductor device, comprising:
- forming at least one capacitor in a first gate structure over a substrate, the at least one capacitor comprising
- a first gate electrode comprising a first conductive layer of at least one metal,
- a semiconductor layer comprising polysilicon and germanium as a dopant,
- a dielectric layer disposed between the first gate electrode and the semiconductor layer, and
- a second conductive layer contacting the semiconductor layer;
- and
- forming at least one resistor over the substrate, the at least one resistor comprising a third conductive layer and electrically connected to the at least one capacitor.
Dependencies are inferred from the claim text.