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US 10,246,797 B2Granted
Method for manufacturing silicon carbide single crystal
AssigneeSumitomo Electric Industries, Ltd.
InventorsSho Sasaki, Shin Harada, Tsutomu Hori
Life of this patent
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Abstract
A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.
Claims4
A method for manufacturing a silicon carbide single crystal, the method comprising:
- packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 70 and not more than 100;
- and
- sublimating the silicon carbide source material by heating the silicon carbide source material.
A method for manufacturing a silicon carbide single crystal, the method comprising:
- packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 90 and not more than 100;
- and
- sublimating the silicon carbide source material by heating the silicon carbide source material.
Dependencies are inferred from the claim text.