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US 10,246,793 B2Granted
Semiconductor manufacturing method and SiC substrate
AssigneeFuji Electric Co., Ltd.
InventorKatsunori Suzuki
Life of this patent
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Abstract
A semiconductor device is provided in which a front surface of an SiC substrate is treated before epitaxial growth so as to reduce crystal defects such as stacking faults. In an aspect, an epitaxial layer is deposited on an SiC substrate in which a periodic texture is formed in a direction perpendicular to a <−1100> direction of the SiC substrate and in which an angle between a basal plane of the SiC substrate and a surface of the formed texture is smaller than an off angle.
Claims10
A method of manufacturing semiconductor, comprising:
- periodically forming textures, each texture being arranged along a direction perpendicular to a <−1100> direction of an SiC substrate, and having a first inclination surface that has an inclination angle ϕ to a front surface of the SiC substrate, wherein an angle between a basal plane of the SiC substrate and the first inclination surface of said each texture is smaller than an off angle θ, and the angle |θ−ϕ| between the basal plane and the first inclination surface of said each texture is 3° or less;
- and
- depositing an epitaxial film on the SiC substrate.
An SiC substrate, comprising:
- a front surface on which an epitaxial film is deposited;
- and
- textures formed on the front surface, each texture being arranged along a direction perpendicular to a <−1100> direction of the SiC substrate and having a first inclination surface that has an inclination angle ϕ to a front surface of the SiC substrate, wherein an angle between a basal plane of the SiC substrate and the first inclination surface of the formed texture is smaller than an off angle θ, and the angle |θ−ϕ| between the basal plane and said each texture is 3° or less.
Dependencies are inferred from the claim text.