Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film

A silicide alloy film that is formed on a substrate containing Si:

• comprising, a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 4.0 eV or less, and Si having a work function of 4.3 eV or more and 4.9 eV or less;
• and in a relationship of the peak intensity (X) of a diffraction peak of a mixed crystal (M1xM2ySi) including the metal M1, the metal M2 and Si, the peak intensity (Y) of a diffraction peak of a silicide (M1aSi) of the metal M1 and the peak intensity (Z) of a diffraction peak of a silicide (M2bSi) of the metal M2, which are observed by X-ray diffraction analysis, the ratio ((Y+Z)/X) of the sum of Y and Z to X is 0.1 or less, wherein M1 is Pt and M2 is Hf.