DNA sequencing detection field effect transistor

A method of DNA sequencing detection, said method comprising:

• providing a semiconductor structure comprising a doped epitaxial source semiconductor material structure located on a first portion of a semiconductor substrate and a doped epitaxial drain semiconductor material structure located on a second portion of said semiconductor substrate;
• a gate dielectric portion located on a third portion of said semiconductor substrate and positioned between said doped epitaxial source semiconductor material structure and said doped epitaxial drain semiconductor material structure;
• a non-stick nucleotide, DNA and DNA polymerase material structure located atop said doped epitaxial source semiconductor material structure and atop said doped epitaxial drain semiconductor material structure, wherein a cavity is present in said non-stick nucleotide, DNA and DNA polymerase material structure that exposes a topmost surface of said gate dielectric portion;
• a dielectric material liner portion located on a bottommost surface and a sidewall surface of said non-stick nucleotide, DNA and DNA polymerase material structure;
• a hard mask portion located directly beneath said dielectric material liner portion;
• and a dielectric spacer located on exposed sidewall surface of said hard mask portion, said dielectric spacer having a portion that separates said gate dielectric portion from said doped epitaxial source semiconductor material structure or said doped epitaxial drain semiconductor material structure;
• forming a DNA polymerase on a portion of said topmost surface of said gate dielectric portion and within said cavity;
• attaching a DNA template to a surface of said DNA polymerase, wherein said DNA template is present in a solution that further contains various nucleotides;
• and
• measuring a change in threshold voltage caused by each nucleotide present in said solution by monitoring the change of drain current of said semiconductor structure.