CMP polishing agent, method for manufacturing thereof, and method for polishing substrate
AssigneeShin-Etsu Chemical Co., Ltd.
InventorMitsuhito Takahashi
Life of this patent
Estimating the term…
Abstract
The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.
Claims12
A CMP polishing agent, comprising polishing particles, a protective film-forming agent, and water, wherein
- the protective film-forming agent is a copolymer of styrene and acrylonitrile,
- an average molecular weight of the copolymer of styrene and acrylonitrile is 500 or more and 20000 or less, and
- the copolymer of styrene and acrylonitrile is present in an amount of 0.1 part by mass or more and 5 parts by mass or less on the basis of 100 parts by mass of the polishing particles.
Dependencies are inferred from the claim text.