Pattern formation method, control device, and semiconductor device manufacture method
AssigneeToshiba Memory Corporation
InventorsKeiko Morishita, Shingo Kanamitsu, Hideaki Sakurai
Life of this patent
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Abstract
In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.
Claims10
A pattern formation method comprising:
- forming a resist pattern on a first film formed on a substrate, the resist pattern including a first pattern in a predetermined region, the first pattern containing a defect in a first region of the predetermined region;
- forming a protection pattern on the first pattern and the first film, the protection pattern being formed in the first region and covering the defect;
- forming a second pattern of the first film by etching the first film from above the resist pattern and the protection pattern, the second pattern being a pattern resulting from the resist pattern and the protection pattern being transferred to the first film;
- removing the resist pattern and the protection pattern;
- and
- forming a third pattern of the first film by etching the first region of the second pattern of the first film with a charged particle beam.
A semiconductor device manufacture method, the method comprising:
- forming a first resist pattern on a first film formed on a first substrate, the first resist pattern including a first pattern in a predetermined region, the first pattern containing a defect in a first region;
- forming a protection pattern on the first pattern and the first film, the protection pattern being formed in the first region and covering the defect;
- forming a second pattern of the first film by etching the first film from above the first resist pattern and the protection pattern, the second pattern being a pattern resulting from the first resist pattern and the protection pattern being transferred to the first film;
- forming a third pattern of the first film by etching the first region of the second pattern of the first film with a charged particle beam;
- forming, a second resist pattern on a second substrate by pressing, the first substrate to which the third pattern of the first film is formed onto a resist formed on a second substrate;
- and
- forming a fourth pattern of the second substrate by etching the top surface of the second substrate from above the second resist pattern.
Dependencies are inferred from the claim text.