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AssigneeRohm and Hass Electronic Materials CMP Holdings, Inc.
InventorsJulia Kozhukh, David Mosley, Naresh Kumar Penta, Matthew Van Hanehem, Kancharla-Arun K. Reddy
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The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallyldimethylammonium salt, such as a diallyldimethylammonium halide, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallyldimethylammonium salt comprises a copolymer of diallyldimethylammonium chloride (DADMAC) and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.
An aqueous chemical mechanical planarization polishing composition consisting of water, a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, an acid selected from the group consisting of sulfuric acid and nitric acid, and from 10 to 500 ppm of a cationic copolymer of a diallyldimethylammonium salt consisting of a copolymer of a diallyldimethylammonium halide salt and sulfur dioxide, wherein the composition has a pH of from 1 to 4.5 and, further wherein, the amount of the dispersion of the elongated, bent or nodular colloidal silica particles, ranges from 0.5 to 30 wt. %, all weights based on the total weight of the composition.
Dependencies are inferred from the claim text.