Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity

A cavity silicon on insulator (CSOI) microelectromechanical system (MEMS) pressure sensing device comprising:

• a substantially cross-shaped recess formed into a second side of a silicon supporting substrate having a first side opposite to the second side, and a the substantially cross-shaped recess having a substantially planar bottom surface, the substantially cross-shaped recess comprising four, substantially rectangular recesses in the second side, each of which extends away from a substantially rectangular-shaped center recess in the second side;
• a substantially planar, buried silicon dioxide layer having a first side opposite to a second side, the first side of the substantially planar buried silicon dioxide layer being attached to the second side of the silicon supporting substrate and extending over the substantially cross-shaped recess;
• a substantially planar device layer having a first side opposite to a second side, the first side of the substantially planar device layer being located on top of the second side of the substantially planar buried silicon dioxide layer, the device layer comprising a diaphragm, which is located above the substantially cross-shaped recess;
• the diaphragm having a shape substantially the same as a shape of the substantially cross-shaped recess and having dimensions which are substantially equal to dimensions of the substantially cross-shaped recess;
• at least four bond pads formed and located on the second side of the device layer, each bond pad of the at least four bond pads being located at a corner of four, diagonally-opposite corners of the device layer, bond pads of the at least four bond pads at the diagonally-opposite corners being located at diagonally-opposite corners of the rectangular-shaped center recess, and the at least four bond pads have keep-out distances from the substantially cross-shaped recess;
• and
• the substantially cross-shaped recess is configured to increase pressure sensitivity while decreasing pressure nonlinearity.