Apparatus and method for generating random digital value
AssigneeICTK Holdings Co., Ltd.
InventorsDong Kyue Kim, Byong Deok Choi
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Abstract
Provided is an apparatus for generating digital values to provide a random digital value. The apparatus may generate the digital value based on a semiconductor process variation. The apparatus may include a generating unit to generate a plurality of digital values, based on the semiconductor process variation, and a processing unit to process the digital values and to provide a first digital value. The generating unit may include a plurality of physically unclonable functions (PUFs). A parameter may be differently applied to the PUFs, and the PUFs may generate the digital values.
Claims16
An apparatus for generating a digital value, the apparatus comprising:
- a generating unit to generate a plurality of digital values, the generating unit comprising a plurality of physically unclonable functions (PUFs), wherein a portion of the PUFs is implemented by applying at least one parameter causing a semiconductor process variation;
- and
- a processing unit to process the digital values and to provide a first digital value,
- wherein at least one of the PUFs comprises a via formed between conductive layers in a semiconductor, and
- wherein the parameter comprises a size of the via selected from a range between a minimum value and a maximum value of the size of the via corresponding to whether the via causes a short between the conductive layers.
A method of generating a digital value by an apparatus for generating a digital value based on a semiconductor process variation, the method comprising:
- generating, by a plurality of physically unclonable functions (PUFs), a plurality of digital values, a portion of the PUFs being manufactured by differently applying at least one parameter causing the semiconductor process variation;
- and
- processing, by a processing unit, the digital values and providing a first digital value,
- wherein at least one of the PUFs comprises a via formed between conductive layers in a semiconductor, and
- wherein the parameter comprises a size of the via selected from a range between a minimum value and a maximum value of the size of the via corresponding to whether the via causes a short between the conductive layers.
Dependencies are inferred from the claim text.