Dynamic error vector magnitude correction for radio-frequency amplifiers

A semiconductor die comprising:

• a semiconductor substrate;
• and
• a radio-frequency amplification system implemented on the semiconductor substrate, and including a power amplifier configured to receive an input signal through an input path and generate an amplified wireless local area network signal substantially during a burst window of transmission;
• a variable attenuator implemented along the input path and configured to adjust power of the input signal, the variable attenuator including a transistor having a variable gain depending on a temperature-dependent bias signal;
• and a control circuit configured to provide the temperature-dependent bias signal to the transistor based on a temperature associated with the power amplifier, such that an impact of the temperature on the power amplifier is compensated by the adjusted power of the input signal.

A radio-frequency module comprising:

• a packaging substrate configured to receive a plurality of components;
• and
• a radio-frequency amplification system implemented on the packaging substrate, and including a power amplifier configured to receive an input signal through an input path and generate an amplified wireless local area network signal substantially during a burst window of transmission;
• a variable attenuator implemented along the input path and configured to adjust power of the input signal, the variable attenuator including a transistor having a variable gain depending on a temperature-dependent bias signal;
• and a control circuit configured to provide the temperature-dependent bias signal to the transistor based on a temperature associated with the power amplifier, such that an impact of the temperature on the power amplifier is compensated by the adjusted power of the input signal.