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US 10,122,298 B2Granted
Semiconductor device and power conversion device
AssigneeFuji Electric Co., Ltd.
InventorHirotoshi Kaneda
Life of this patent
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Abstract
A semiconductor device includes a unipolar switching element having a drain terminal, a gate terminal, and a source terminal, wherein a serial connection body of a capacitor and a resistor is connected between the drain terminal and the gate terminal.
Claims7
A power conversion device including a semiconductor device, wherein the semiconductor device comprises:
- a switching element comprising a high voltage side terminal, a control terminal, and a low voltage side terminal;
- a serial connection body comprising a capacitor and a resistor connected between the high voltage side terminal and the control terminal,
- wherein the capacitor and the resistor in the serial connection body are set as a time constant that suppresses resonance characteristics that occur due to an inductance component and a capacitance component present in a circuit to which the semiconductor device is connected and an output capacitance parasitic between the high voltage side terminal and the low voltage side terminal of the switching element.
Dependencies are inferred from the claim text.