Structure of VCSEL and method for manufacturing the same

A method for manufacturing VCSEL structures, comprising the steps of:

• performing a semiconductor process on a laser-chip base material so as to have the laser-chip base material to include, in an upward order, a substrate, a first mirror layer on the substrate, an active region on the first mirror layer, and a second mirror layer on the active region;
• performing a first mask manufacturing process through a first mask to form a first mask layer with a first predetermined pattern on and an upper surface of the second mirror layer, wherein the first predetermined patter is respective to a pattern of the first mask;
• performing an ion-implantation process to form an ion-implanted region in an area of the second mirror layer uncovered by the first photoresist layer, wherein a bottom portion of the ion-implanted region is spaced from the active region by a predetermined height;
• with the first mask layer unremoved, performing a second mask manufacturing process through a second mask to form a second mask layer with a second predetermined patter on the upper surface of the second mirror layer and the first mask layer, wherein the second predetermined pattern is respective to a pattern of the second mask;
• performing a first etching process to form a first isolation trench by etching an area of the second mirror layer, the active region and the first mirror layer covered by the second mask layer, wherein the first isolation trench penetrates downward through the second mirror layer and the active region from the upper surface of the second mirror layer so as to have a bottom portion of the first isolation trench located at the first mirror layer;
• performing an oxidation process through the first isolation trench to form an oxide layer extending horizontally in the second mirror layer, wherein the oxide layer is close in height to or overlapping the bottom portion of the ion-implanted region;
• performing a second etching process to form a second isolation trench on the second mirror layer, wherein the second isolation trench penetrates downward at least through the second mirror layer and the oxide layer from the upper surface of the second mirror layer;
• filling a dielectric material into the first isolation trench, and forming an isolating layer, a first contact layer and a second contact layer respectively in specific areas on the laser-chip base material;
• wherein a mesa is defined on the laser-chip base material by the second isolation trench, the second isolation trench circles at least a corresponding portion of a periphery of the mesa, the mesa on the substrate consists of at least a portion of the first mirror layer, the active region, the second mirror layer and the oxide layer, an output window is formed in a central area on a top surface of the mesa, the first isolation trench located in the mesa circles at least a portion of a periphery of the output window and is spaced from the second isolation trench by a gap, and the first isolation trench penetrates downward at least through the second mirror layer, the oxide layer and the active region from the top surface of the mesa;
• wherein the first contact layer located on the top surface of the mesa contacts the second mirror layer;
• wherein the ion-implanted region is located in the second mirror layer, and the ion-implanted region inside the mesa is located between the output window and the first isolation trench by circling at least a portion of a periphery of the output window.