Field effect transistor and method for production thereof

A method of producing a vertical channel field-effect transistor, comprising the steps of:

• providing a bottom conducting layer on a primary substrate, the bottom conducting layer comprising at least one first functional group;
• providing a transferable conducting layer on a secondary substrate, the transferable conducting layer comprising at least one second functional group;
• printing an insulating adhesive layer on at least one of the bottom conducting layer and the transferable conducting layer, the insulating layer comprising at least one third functional group;
• laminating the primary substrate and the secondary substrate, wherein at least a portion of the insulating adhesive layer is sandwiched between the bottom conducting layer and the transferrable conducting layer;
• activating the insulating adhesive layer, thereby causing some of the at least one third functional group to make chemical bonds with some of the at least one first functional group and with some of the at least one second functional group;
• delaminating the secondary substrate from the primary substrate, wherein a top conducting layer is created from the transferrable conducting layer, the horizontal dimension of the top conducting layer is same as the horizontal dimension of the insulating adhesive layer such that a portion of a perimeter of the top conducting layer over the bottom conducting layer defines a channel width of the vertical channel field-effect transistor;
• printing at least one semiconducting layer on at least a portion of the channel width;
• printing at least one insulating layer on at least a portion of the at least one semiconducting layer;
• and
• printing at least one gate conducting layer on at least a portion of the at least one insulating layer.