Semiconductor device structures including silicon-containing dielectric materials
AssigneeMicron Technology, Inc.
InventorsThomas R. Omstead, Cole S. Franklin
Life of this patent
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Abstract
A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.
Claims18
A semiconductor device structure comprising:
- stacks separated from one another by a distance of from 50 Å to 220 Å;
- and
- at least one conformal silicon-containing dielectric material on each of the stacks, wherein the at least one conformal silicon-containing dielectric material comprises a thickness of from 10 Å to 1000 Å.
A semiconductor device structure comprising:
- stacks separated from one another by a distance of from 50 Å to 220 Å;
- and
- at least one conformal silicon-containing dielectric material on each of the stacks, wherein the at least one conformal silicon-containing dielectric material comprises from 10% to 90% silicon and from 10% to 90% nitrogen.
A semiconductor device structure comprising:
- stacks comprising carbon and chalcogenide materials on a material, the stacks separated from one another by a distance of from 50 Å to 220 Å;
- and
- a silicon carbon nitride material in direct contact with the carbon and chalcogenide materials of the stacks.
A semiconductor device structure comprising:
- stacks separated from one another by a distance of from 50 Å to 220 Å, the stacks comprising tungsten, a first carbon electrode on the tungsten, a first chalcogenide material on the first carbon electrode, a second carbon electrode on the first chalcogenide material, a second chalcogenide material on the second carbon electrode, and a third carbon electrode on the second chalcogenide material;
- and
- a silicon carbon nitride material in direct contact with the carbon and chalcogenide materials of the stacks.
Dependencies are inferred from the claim text.