Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque

A magnetic device comprising:

• a plurality of magnetic junctions, each of the plurality of magnetic junctions including
• a free layer, a pinned layer and a nonmagnetic spacer layer, the nonmagnetic spacer layer being between the pinned layer and the free layer, the free layer having at least one of a tilted easy axis and a high damping constant, the tilted easy axis being at a nonzero acute angle from a direction perpendicular-to-plane, the nonzero acute angle being at least five degrees and not more than ten degrees, the high damping constant being at least 0.02 and not more than 0.8, the free layer having the tilted easy axis;
• and
• at least one spin-orbit interaction (SO) active layer adjacent to the free layer of the each of the plurality of magnetic junctions, the at least one SO active layer carrying a current in-plane, the at least one SO active layer exerting a SO torque on the free layer due to the current passing through the at least one SO active layer, the free layer being switchable using the SO torque;
• wherein if the free layer has the tilted easy axis then the free layer includes at least one of an L10 CoPt (111) layer on an MgO/Pt (111) underlayer, a Tbx(Fe50Co50)1-xlayer where x is greater than zero and less than one, a Fe3Pt/[FePt/MgO]2 bilayer, and a multilayer, the multilayer including a selection layer, a coupling layer and a perpendicular layer, the perpendicular layer having a high perpendicular anisotropy energy greater than an out-of-plane demagnetization energy, the coupling layer being amorphous and between the selection layer and the perpendicular layer, the selection layer being selected from a tilted layer and an in-plane anisotropic layer, the tilted layer having an easy axis at an additional nonzero acute angle from the direction perpendicular-to-plane, the in-plane anisotropic layer having a preferred axis in-plane;
• and
• wherein if the free layer includes the high damping constant then the free layer includes at least five atomic percent and not more than twenty atomic percent of at least one dopant, the at least one dopant including at least one of Pt, Ir, Os, Re, W, Bi, Sm, Ho, Dy, Er.

A method for providing a magnetic device comprising:

• providing a plurality of magnetic junctions, each of the plurality of magnetic junctions including a pinned layer, a nonmagnetic spacer layer and a free layer, the nonmagnetic spacer layer residing between pinned layer and the free layer, the free layer having at least one of a tilted easy axis and a high damping constant, the tilted easy axis being at a nonzero acute angle from a direction perpendicular-to-plane, the high damping constant being at least 0.02, the free layer having the tilted easy axis, the free layer including a multilayer having a selection layer, a coupling layer and a perpendicular layer, the perpendicular layer having a high perpendicular anisotropy energy greater than an out-of-plane demagnetization energy, the coupling layer being amorphous and between the selection layer and the perpendicular layer, the selection layer being selected from a tilted layer and an in-plane anisotropic layer, the tilted layer having an easy axis at an additional nonzero acute angle from the direction perpendicular-to-plane, the in-plane anisotropic layer having a preferred axis in-plane;
• and
• providing at least one spin-orbit interaction (SO) active layer adjacent to the free layer of the each of the plurality of magnetic junctions, the at least one SO active layer carrying a current in-plane, the at least one SO active layer exerting a SO torque on the free layer due to the current passing through the at least one SO active layer, the free layer being switchable using the SO torque.