Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)

A method for providing a magnetic junction usable in a magnetic device, the method comprising:

• providing a free layer, the free layer being switchable between a plurality of stable magnetic states using a write current passed through the magnetic junction;
• providing a nonmagnetic spacer layer;
• providing a pinned layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, wherein at least one of the step of providing the free layer and the step of providing the pinned layer includes
• depositing a magnetic layer including an interstitial glass-promoting component, the magnetic layer being amorphous as-deposited;
• depositing an adsorber layer on the magnetic layer, the adsorber layer attracting the interstitial glass-promoting component and having a lattice mismatch with the nonmagnetic spacer layer of not more than ten percent;
• and
• performing at least one anneal of the magnetic layer and the adsorber layer, each of the at least one anneal having an anneal temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius
• providing an additional nonmagnetic spacer layer, the free layer being between the additional nonmagnetic spacer layer and the nonmagnetic spacer layer;
• and
• providing an additional pinned layer, the additional nonmagnetic spacer layer being between the additional pinned layer and the free layer, wherein the step of providing the additional pinned layer further includes
• depositing an additional magnetic layer including an additional interstitial glass-promoting component, the additional magnetic layer being amorphous as-deposited;
• depositing an additional adsorber layer on the additional magnetic layer, the additional adsorber layer including at least one of Ti, Nb, Mo, Ta, W, Cr and V;
• performing at least one additional anneal of the additional magnetic layer and the additional adsorber layer at an additional anneal temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius;
• optionally removing the additional adsorber layer;
• and
• optionally depositing an additional magnetic refill layer.

A method for providing a magnetic junction usable in a magnetic device, the method comprising:

• providing a free layer, the free layer being switchable between a plurality of stable magnetic states using a write current passed through the magnetic junction;
• providing a crystalline MgO tunneling barrier layer;
• providing a pinned layer, the crystalline MgO tunneling layer residing between the pinned layer and the free layer;
• and
• wherein at least one of the step of providing the free layer and the step of providing the pinned layer includes providing a magnetic substructure, the step of providing a magnetic substructure including
• depositing a magnetic layer, the magnetic layer including C as an interstitial glass-promoting component, being amorphous as-deposited and including FeC;
• depositing an C adsorber layer on the magnetic layer, the C adsorber layer being selected from a Ti layer, a Nb layer, a Mo layer, a W layer, a Cr layer and a V layer;
• performing at least one rapid thermal anneal (RTA) of the magnetic layer and the adsorber layer at a first temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius, the magnetic layer being at least partially crystallized after the at least one RTA;
• performing a plasma treatment to remove at least a portion of the adsorber layer after the at least one RTA is performed and such that a portion of the magnetic layer is exposed;
• and
• depositing an additional magnetic layer after the plasma treatment.