Semiconductor device and method of manufacturing same

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) depositing a data recording layer, a tunnel barrier layer, a data reference layer, and a cap layer successively over a semiconductor substrate;
• (b) processing the data reference layer and the cap layer by using a first mask;
• (c) depositing a first insulating film having a first thickness so as to cover the data recording layer, the tunnel barrier layer, the data reference layer, and the cap layer;
• (d) depositing, over the first insulating film, a second insulating film having a second thickness greater than the first thickness;
• and
• (e) processing the data recording layer, the tunnel barrier layer, the first insulating film, and the second insulating film by using a second mask,
• wherein in the step (b), the data reference layer and the cap layer are processed so as to overlap with each other while having the same shape in plan view,
• wherein in the step (e), the data reference layer and the cap layer have respective side walls covered with the first insulating film, and
• wherein the data recording layer and the tunnel barrier layer are processed so that in plan view, the data recording layer and the tunnel barrier layer overlap with each other, while having the same shape, and the data recording layer embraces the data reference layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) successively depositing a data recording layer, a tunnel barrier layer, a data reference layer, and a cap layer over a semiconductor substrate;
• (b) processing the data reference layer and the cap layer by using a mask;
• (c) depositing a first insulating film having a first thickness so as to cover the data recording layer, the tunnel barrier layer, the data reference layer, and the cap layer;
• (d) depositing, over the first insulating film, a second insulating film having a second thickness greater than the first thickness;
• and
• (e) processing the data recording layer, the tunnel barrier layer, the first insulating film, and the second insulating film by anisotropic etching,
• wherein in the step (b), the data reference layer and the cap layer are processed so as to overlap with each other while having the same shape in plan view,
• wherein in the step (e), the data reference layer and the cap layer have respective side walls covered with the first insulating film, and
• wherein the data recording layer and the tunnel barrier layer are processed so that in plan view, the data recording layer and the tunnel barrier layer overlap with each other, while having the same shape, and the data recording layer embraces the data reference layer.