Vehicle lamp using semiconductor light emitting device

A vehicle lamp having a plurality of semiconductor light emitting devices, wherein at least one of the semiconductor light emitting devices includes:

• a first conductive electrode and a second conductive electrode;
• a first conductive semiconductor layer having the first conductive electrode;
• a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, and having the second conductive electrode;
• and
• a passivation layer formed to enclose the semiconductor light emitting device,
• wherein one surface of the first conductive semiconductor layer is divided into a first region where the first conductive electrode is disposed, and a second region covered by the passivation layer,
• wherein the passivation layer is provided with a plurality of layers having different refractive indexes, such that light is reflected from the second region,
• wherein the passivation layer includes a first part which covers side surfaces of the semiconductor light emitting device, and a second part which covers one surface of the first conductive semiconductor layer,
• wherein the first part is formed as a single layer, and
• wherein the second part is formed of the plurality of layers.