Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer

An optoelectronic semiconductor chip comprising:

• a p-type semiconductor region;
• an n-type semiconductor region;
• and
• an active layer suitable for emission of radiation arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer comprising a multiple quantum well structure, the multiple quantum well structure having a plurality of alternating quantum well layers and barrier layers,
• wherein a barrier layer arranged closer to the p-type semiconductor region than to the n-type semiconductor region is a high barrier layer having an electronic band gap Ehb that is larger than electronic band gaps Eb of other barrier layers,
• wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type semiconductor region has a thickness that is greater than thicknesses of other quantum well layers,
• wherein the multiple quantum well structure has just one high barrier layer, and
• wherein the high barrier layer is arranged between a quantum well layer that is a mth quantum well layer starting from the p-type semiconductor region and an immediately adjacent quantum well layer, where m is a number between 1 and 20.