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US 10,121,933 B2Granted
Semiconductor device and the manufacturing method thereof
AssigneeEpistar Corporation
InventorsMeng Yang Chen, Rong Ren Lee, Shih Chang Lee
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Abstract
The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than smaller than 1*109 cm−2.
Claims19
A method forming a semiconductor light-emitting unit, comprising the steps of:
- providing a semiconductor substrate;
- epitaxially growing a reaction layer on the semiconductor substrate;
- and
- epitaxially growing a buffer layer on the reaction layer,
- wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than 1*109 cm−2, and
- wherein the buffer layer comprises GaP or InP.
3 more elements
Dependencies are inferred from the claim text.