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US 10,121,920 B2Granted
Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
AssigneeInternational Business Machines Corporation
InventorsTalia S. Gershon, Oki Gunawan, Jeehwan Kim, Yun Seog Lee
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Abstract
A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type layer includes a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer. A transparent contact is formed on the n-type layer.
Claims13
A photovoltaic device, comprising:
- a substrate;
- a first electrode formed on the substrate;
- a p-type absorber layer including a chalcogenide compound;
- an n-type layer including a zinc oxysulfide base material, the zinc oxysulfide base material further including sulfur dopants to match a feature of the absorber layer;
- and
- a transparent contact formed on the n-type layer.
3 more elements
A photovoltaic device, comprising:
- a substrate;
- a first electrode formed on the substrate;
- a p-type absorber layer including a chalcogenide compound comprising one of CZTSSe or CIGSSe;
- an n-type layer including Zn(O1−x,Sx) base material, the Zn(O1−x,Sx) base material further including sulfur dopants to match one or more of band alignment with adjacent layers and electron affinity of the absorber layer, wherein x is between about 0.1 to about 0.6;
- and
- a transparent contact formed on the n-type layer.
3 more elements
Dependencies are inferred from the claim text.