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US 10,121,902 B2Granted
Semiconductor integrated circuit device including nano-wire selector and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDong Yean Oh
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Abstract
In a method of manufacturing a semiconductor integrated circuit device, an active region including a nano-wire may be formed on a bulk insulating layer. A hard mask pattern may be formed to partially expose the nano-wire. A work function-controlling region may be formed on the nano-wire exposed through the hard mask pattern. The hard mask pattern may be removed. A gate insulating layer may be formed on the nano-wire. A gate may be formed to surround the nano-wire.
Claims14
A method of manufacturing a semiconductor integrated circuit device, the method comprising:
- forming an active region including a nano-wire on a bulk insulating layer;
- forming a hard mask pattern configured to partially expose the nano-wire;
- forming a work function-controlling region on the nano-wire exposed through the hard mask pattern;
- removing the hard mask pattern;
- forming a gate insulating layer on the nano-wire;
- forming a gate configured to surround the nano-wire;
- and
- forming a source and a drain in the active region at both sides of the gate,
- wherein the hard mask pattern is formed on the bulk insulating layer to expose at least one region of the nano-wire corresponding to an edge of the gate, and
- wherein the work function-controlling region is formed to include a depth less than a radius of the nano-wire.
7 more elements
Dependencies are inferred from the claim text.